硅漂移探测器(Silicon Drift Detector)

可根据客户要求进行设计加工。
Our products can be designed and processed according to customer's requirements.

特征：Features:

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详细参数Specifications
光谱响应范围Spectral Range
外形尺寸图（单位：mm）Dimensional outline drawing(Unit: mm)

可根据客户要求进行设计加工，技术团队掌握SDD探测器的设计与工艺技术，并已成功研制出SDD探测器样品，其漏电流水平达到1nA/(cm²×300μm)@25℃，达到国际先进水平。匹配低噪声电荷灵敏前置放大器电路，其能量分辨率可达到FWHM 276eV@5.9keV 。
Our products can be designed and processed according to customer's requirements. Our company's technical team master the design and process technology of SDD detector. The sample of SDD detector had been successfully developed with leakage current of 1nA/(cm2× 300μ M)@25℃, up to the international advanced level.Matching the low noise charge sensitive preamplifier circuit, the SDD detector's energy resolution can reach FWHM 276eV@5.9keV.

X射线
X-ray

晶圆尺寸最大6英寸（150mm）可根据客户要求尺寸设计划片切割。
Our company have 6 inch wafer foundry line and wafer size up to 6 inches (150mm). Wafer size also can be sliced according to customer's requirements.